To provide a semiconductor device inspection device and a semiconductor device inspection method, capable of efficiently analyzing emission spectrum of an abnormal location in a short time.

A spectroscope 2, which is movable between a spectral position on a light leading optical path in a light leading optical system 1 and a stand-by position which is deviated from the light guide optical path is installed between an objective lens part 11, including objective lenses 11a to 11c, for generating observed image from the image of a semiconductor device S and a imaging camera 3 for capturing the observed image. When emission spectrum analysis is required, spectroscopic operation is conducted, by the spectroscope 2 inserting a light emitting image from the semiconductor device S into the spectral position, to obtain the generated emission spectrum image by the imaging camera 3. Consequently, the acquisition of ordinary light emitting image or reflected light image is made compatible with the capture of emission spectral image, and the emission spectrum in the abnormal location can be analyzed efficiently and a short time.