Title:
APPARATUS AND METHOD FOR STORING INFORMATION IN MAGNETIC FIELD
Document Type and Number:
Japanese Patent JPH04302178
Kind Code:
A
Abstract:
PURPOSE: To obtain a high-speed magnetic memory cell having a high memory capacity and increased resistance modulation by providing a current path which is isolatedly formed adjacent to a superconductor layer and operable to induce an electric field of a selected orientation in this layer. CONSTITUTION: In order to store information in memory cells 10, a local magnetic field is generated in a superconductor gate 12 to erase the residual flux on the gate 12. An electric field is induced in the gate 12 to cause an inverted layer in a channel region 22, allowing a current to flow between n<+> source/drain regions 18, 20. When the gate 12 temp. exceeds the transition temp. of the superconductor, the magnetic field in the gate 12 fades out. The current flowing between the n<+> source/drain regions 18, 20 lessens, and information is written in the gate 12. The current flowing through the channel 22 lessens and transition temp. is lowered, the gate 12 recovers superconductivity, and the magnetic field is written in the memory cells 10.
Inventors:
GEIRII EI FUREIZAA
Application Number:
JP33888091A
Publication Date:
October 26, 1992
Filing Date:
December 20, 1991
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC
International Classes:
G11C11/14; G11C11/44; H01L27/10; H01L39/00; (IPC1-7): G11C11/14; H01L27/10; H01L39/00
Attorney, Agent or Firm:
Akira Asamura (3 outside)