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Patent Searching and Data


Title:
APPARATUS AND METHOD FOR SURFACE TREATMENT
Document Type and Number:
Japanese Patent JPS62260327
Kind Code:
A
Abstract:

PURPOSE: To improve the efficiencies of etching and treatments for improving the quality of surface and purifying the surface, by a method wherein the resin of fluorine or chlorine sputtered easily by ion beams is provided on the surface of a scattering solid body.

CONSTITUTION: A polytetrafluoroethylene film is provided as a resin film 6 on the upper layer of the surface of a scattering solid body 3 of silicon. Most of ion beams 2 falling on the resin film 6 on the surface of the scattering solid body are scattered on this resin film 6. On the occasion, atoms and molecules constituting the resin film are sputtered simultaneously and tend to fly toward the surface of a sample. Among sputtered particles falling substantially vertically to the surface of the sample, particles of halogen atoms and halogen compounds react chemically with materials containing Si and Si compounds and metal elements such as Al, W, Mo, Ga and As and constituting the sample, and the product of reaction is vaporized from the surface of the sample and discharged from the apparatus.


Inventors:
OKUDAIRA SADAYUKI
TAJI SHINICHI
TSUJIMOTO KAZUNORI
MUKAI KIICHIRO
Application Number:
JP10202886A
Publication Date:
November 12, 1987
Filing Date:
May 06, 1986
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
C23F1/00; H01L21/205; H01L21/302; H01L21/3065; H01L21/31; (IPC1-7): C23F1/00; H01L21/205; H01L21/302; H01L21/31
Attorney, Agent or Firm:
Katsuo Ogawa