To form a proper quality resist pattern on a wafer without causing defects.
A chemical 3, supplied from a liquid supply source through a particle filtration apparatus 9, is discharged from a discharge nozzle 6 onto the surface of the wafer. A particulate-measuring apparatus 13 is interposed on a pipe line between the particle filtration apparatus 9 and the discharge nozzle 6 for measuring the amount of particulate matter, such as air bubbles and particles contained in the chemical 3. Further, there are provided a data collecting unit 15 for always collecting controlled voltage values of a solenoid control valve 10 for opening and closing piping and measured values of the particulate measuring apparatus 13, and a calculation apparatus 16 for calculating the measured result of the particulate-measuring apparatus 13. The calculation apparatus 16 calculates the number of particles in the particulate matter contained in the chemical applied per one wafer, and compares the number of particles in the particulate matter with a standard value to determine whether the thin-film application apparatus is stopped.
IMAI SHINICHI
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori