Title:
APPARATUS AND METHOD FOR TREATING SUBSTRATE
Document Type and Number:
Japanese Patent JP2005286221
Kind Code:
A
Abstract:
To suppress reduction in substrate treatment quality due to a droplet or vapor generated from a high-temperature treatment liquid.
A wafer W is rotated with being held by a spin chuck 2. An SPM (sulfuric acid-hydrogen peroxide solution) liquid is supplied from a nozzle 3 and filled on a top of the wafer W. A suction head 81 is provided near the nozzle 3. Vapor generated from the SPM liquid supplied from the nozzle 3 is sucked in by the suction head 81, thereby removed from the neighborhood of the wafer W. The nozzle 3 and the suction head 81 are commonly supported by a nozzle arm 31, and therefore a positional relationship between the nozzle 3 and the suction head 81 is held even when the nozzle arm 31 is oscillated.
Inventors:
Fujii, Kenji
Application Number:
JP2004000100547
Publication Date:
October 13, 2005
Filing Date:
March 30, 2004
Export Citation:
Assignee:
DAINIPPON SCREEN MFG CO LTD
International Classes:
B08B5/04; B08B3/02; B08B3/10; H01L21/027; H01L21/304; B08B5/00; B08B3/02; B08B3/10; H01L21/02; (IPC1-7): H01L21/304; B08B3/02; B08B3/10; B08B5/04; H01L21/027
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