To provide an apparatus for producing an aluminum nitride single crystal where the aluminum nitride single crystal can be produced by quickening its growth rate without increasing the load of energy.
The apparatus for producing the aluminum nitride single crystal has at least a heating furnace body comprising a reaction chamber 3 having an opening part at an upper part and housing a raw material 22 at the bottom side of an inner space 3a and a susceptor 4 to plug the opening part, a first gas supplying means 5a to introduce a process gas from outside to the inner space 3a and a second gas supplying means 5b to introduce a carrier gas from outside to the inner space 3a. A first introducing part 5A located on the sidewall of the reaction chamber 3 so that the first gas supplying means 5a is opened to the inner space 3a and a second introducing part 5B located on the sidewall of the reaction chamber 3 so that the second gas supplying means 5b is opened to the inner space 3a are positioned in this order when seen from the susceptor 4 toward the raw material 22.
MABUCHI TOSHIAKI
| JP2004307333A | 2004-11-04 | |||
| JP2007246343A | 2007-09-27 | |||
| JP2007008779A | 2007-01-18 |
Tadashi Takahashi
Takashi Watanabe