PURPOSE: To facilitate the production of a long silica-carbon composite material, to produce a silicon carbide material having large size and high strength and to enable the production of a silicon carbide material having high purity and useful for a heat-resistant jig such as process tube and wafer boat to be used in the thermal diffusion treatment of silicon wafer.
CONSTITUTION: Carbon produced by the thermal decomposition of a gas containing a hydrocarbon gas or a halogenated hydrocarbon gas is deposed in a porous synthetic quartz glass material 12. The objective apparatus 10 for producing a silica-carbon composite material by the above process is composed of a furnace core tube 11 holding a porous synthetic quartz glass material 12, a heating zone shorter than the porous synthetic quartz glass material 12 and a heating apparatus 13 placed around the outer circumference of the furnace core tube 11. The heating apparatus 13 is movable relatively to the porous synthetic quartz glass material 12 in the furnace core tube 11.
| JPS6027697 | PREPARATION OF CARBON FILM |
| JPS5443200 | PRODUCTION OF SILICON CARBIDE SUBSTRATE |
| WO/2014/076459 | PRODUCTION OF BORON CARBIDE POWDER |
MINAGAWA KAZUHIRO
ARAHORI TADAHISA
