Title:
APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP3658832
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus for producing a silicon carbide single crystal for efficiently producing the silicon carbide single crystal ingot having the same polygon and a process for producing the 4H type or 6H type silicon carbide single crystal.
SOLUTION: This apparatus for producing the silicon carbide single crystal and this process for producing the silicon carbide single crystal comprise maintaining a shielding plate 9 arranged to face the silicon carbide single crystal plane grown on a silicon carbide single crystal substrate 3 placed in a graphite crucible 1 in parallel therewith at an arbitrary temp. and growing the silicon carbide single crystal while moving the silicon carbide single crystal plane and this shielding plate by driving devices in such a manner that the specified distance is maintained between both.
Inventors:
Hisayoshi Tajima
Yasuo Kito
Eiji Kitaoka
Yasuo Kito
Eiji Kitaoka
Application Number:
JP2539696A
Publication Date:
June 08, 2005
Filing Date:
February 13, 1996
Export Citation:
Assignee:
株式会社デンソー
International Classes:
C30B23/02; C30B29/36; H01L21/20; H01L21/203; (IPC1-7): C30B29/36; C30B23/02; H01L21/20; H01L21/203
Domestic Patent References:
| JP9059085A | ||||
| JP8295595A | ||||
| JP63002776U | ||||
| JP61024472U |
Attorney, Agent or Firm:
Takehiko Suzue