To automate a stage for growing a single crystal, to pull up the single crystal free from crystal defects with good reproducibility and to rapidly pull up the single crystal.

A seed crystal 17 is brought into contact with a melt and the time before this seed crystal 17 melts down is measured when the temp. of the melt surface is higher than an optimum temp. The temp. is lowered according to the measured time. The time before the crystal diameter attains a prescribed diameter is measured when the temp. of the melt surface is lower than the optimum temp. The temp. of the melt surface is raised according to this time. The temp. of the melt surface is pinpointed to the optimum temp. for seeding by repeating such correction processing. Further, the average pulling-up speed to a set length is calculated during the course of pulling up of the dash neck of the single crystal in the pulling up of the single crystal at the optimized temp. of the melt surface and the melt temp. is further corrected. The stage for growing the single crystal is automated and the single crystal free from the crystal defects is pulled up with the good reproducibility.