PURPOSE: To carry out highly precise inspection after development of resists by detecting secondary electrons generated from a sample when an electron beam is radiated to the sample, making an image, and at the same time making a fluorescent image based on the fluorescence radiating in the time of radiation of excited light to the sample.

CONSTITUTION: At first a sample 3 is set in the position of the solid line on a sample stand 12 and an electron beam is radiated from an electrooptical mirror cylinder 1 to and at the same time brought into scanning by a scan signal from a scan signal generator 4. Secondary electrons generated from the sample 3 are detected by a secondary electron detector 5 and made into an image on an image display part 7. Then, the sample stand 12 is moved so as to move the sample to the dotted line and a light source lamp 12 is turned on. An excited light with a desired wavelength is radiated to the sample 3 and fluorescent image generated from the sample 3 is photographed by a color camera 17 and at the same time appearance inspection is carried out by an observer with the naked eye using a focusing lens 8. By this, highly precise inspection to investigate whether resist remains or not on the surface after resist development on semiconductor sample, etc., can be carried out.