To obtain an aqueous dispersion for mechanochemical polishing useful for a metallic layer such as a film to be worked in a semiconductor device.
This aqueous dispersion contains an oxidizing agent such as hydrogen peroxide, peracetic acid, an organic peroxide or a permanganic acid compound, abrasive grains having 0.01-3 μm, particularly 0.05-1.0 μm average grain diameter and comprising inorganic particles of silica, alumina or the like or organic particles of polystyrene, polymethyl methacrylate or the like and water. When a body with a metallic layer to be polished is immersed in the aqueous dispersion for 30 min, the etching depth of the metallic layer is ≤2,000 . The aqueous dispersion is used for mechanochemically polishing a metallic layer such as a film to be worked in a semiconductor device. The aqueous dispersion may further contain 3-3,000 ppm ions of a polyvalent metal such as aluminum, titanium or chromium, an organic acid such as p- toluenesulfonic acid or dodecylbenzenesulfonic acid and an inorganic acid such as nitric acid or hydrochloric acid.
KUBOTA KIYONOBU
MOTONARI MASAYUKI
IIO AKIRA
