PURPOSE: To provide an arc chamber for ion source, wherein exhaust of the slit part is lesser, the lifetime long, ion current increased, Na contamination on wafer nullified, plasma stability excellent, and contaminants in the chamber, easy to remove, by forming it from material containing specific A-substance or B-substance.
CONSTITUTION: A-substance is carbide, boride, or nitride of one or more metals belonging to No.IV a group, No.V a group, and No.VI group on Periodic Table, for ex. MoB2 and MoC, while the B-substance is oxide or nitride of the elements Al, B, Si, for ex. AIN. Al2O3, The slit part 3 and sides 4, 4 ' among component members of arc chamber are made of material containing these A-substance or B-substance. The bottom 6 is made of Mo, and this material is affixed to the inner walls 7 of the sides. Thus the one using members processed from these materials has a lifetime 1. 9-3 times as much, and the wafer thus processed is free from contamination with Na, and contaminants in the arc chamber can be removed easily, and the time for restarting is shortened.
EBARA KENICHI
UMEZAWA HIROYUKI
MORIGUCHI TAKESHI
| JP62278735B | ||||
| JPH01163952A | 1989-06-28 |