Title:
AREA EMISSION TYPE SEMICONDUCTOR LASER AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3293221
Kind Code:
B2
Abstract:
PURPOSE: To enhance a resonator in reflectivity under an electrode so as to obtain an area emission type semiconductor laser of high efficiency by a method wherein a multilayered semiconductor film mirror is provided under the electrode.
CONSTITUTION: A set of reflecting mirrors 104 and 114 and semiconductor layers interposed between the mirrors 104 and 114 are provided. At least, one layer 107 out of the semiconductor layers is formed into a pillar or pillars to constitute an optical resonator, and a II to VI compound semiconductor epitaxial layer 109 buried around the pillar-shaped semiconductor layer 107 is included. A light projecting reflecting mirror out of reflecting mirrors is composed of a distributed reflection type multilayered film mirror 114 where first layers of III-V compound semiconductor and second layers of III-V compound semiconductor different from the first layer in refractive index are alternately laminated, a metal electrode 110 where a light projecting aperture is provided onto the second layer, and a dielectric multilayered film mirror 111 where third layers formed of dielectric material and fourth layers formed of dielectric material different from the third layer in refractive index are alternately laminated on the light projecting aperture.
Inventors:
Katsumi Mori
Takayuki Kondo
Atsushi Sato
Takayuki Kondo
Atsushi Sato
Application Number:
JP4455793A
Publication Date:
June 17, 2002
Filing Date:
February 09, 1993
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
H01S5/00; H01S5/327; (IPC1-7): H01S5/327
Domestic Patent References:
| JP4130690A | ||||
| JP4263482A |
Other References:
【文献】国際公開91/16748(WO,A1)
Attorney, Agent or Firm:
Hajime Inoue (2 outside)