Title:
ATOMIC LAYER DEPOSITION OF NANOLAMINATE FILM
Document Type and Number:
Japanese Patent JP2004260168
Kind Code:
A
Abstract:
To simplify deposition method by eliminating an oxidizing agent process, and further improving the quality of a nanolaminate film.
The atomic layer deposition method for depositing an oxide nanolaminate thin film is provided. In the method, nitrate ligand of a first precursor is used as an oxidizing agent for a second precursor to form the oxide nano laminate. By using a hafnium nitride precursor and an aluminum precursor, the method is suited for depositing a High-k oxidation hafnium/aluminum oxide nanolaminate dielectric, used for a gate dielectric or a capacitor dielectric on a silicon surface which is subjected to hydrogen terminal treatment.
Inventors:
CONLEY JOHN F JR
YOSHI ONO
SOLANKI RAJENDRA
YOSHI ONO
SOLANKI RAJENDRA
Application Number:
JP2004042166A
Publication Date:
September 16, 2004
Filing Date:
February 18, 2004
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/205; C23C16/40; C23C16/455; C23C16/56; H01L21/28; H01L21/314; H01L21/316; H01L21/336; H01L21/8242; H01L27/108; H01L29/51; C23C16/44; H01L29/49; (IPC1-7): H01L21/316; C23C16/40; H01L21/8242; H01L27/108
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Takeshi Oshio
Takaaki Yasumura
Takeshi Oshio
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