Title:
ATOMIC LAYER DEPOSITION USING METAL AMIDINATE
Document Type and Number:
Japanese Patent JP2017122273
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method of depositing copper and cobalt thin layers having an extremely uniform thickness and being almost free from a defect and a pin hole.SOLUTION: A copper metal thin film is deposited on a heated substrate by the reaction of alternating doses of copper(I) NN'-diispropylacetamidinate vapor and hydrogen gas. A cobalt metal thin film is deposited on a heated substrate by the reaction of alternating doses of cobalt(II) bis(N,N'-diispropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively.SELECTED DRAWING: None
Inventors:
GORDON ROY G
LIM BOOYONG S
LIM BOOYONG S
Application Number:
JP2016229244A
Publication Date:
July 13, 2017
Filing Date:
November 25, 2016
Export Citation:
Assignee:
HARVARD COLLEGE
International Classes:
C23C16/18; C07F1/02; C07F1/08; C07F1/10; C07F3/00; C07F3/02; C07F5/00; C07F7/28; C07F9/00; C07F9/94; C07F13/00; C07F15/02; C07F15/04; C07F15/06; C23C16/34; C23C16/40; C23C16/455; H01L21/28; H01L21/285; H01L21/316; H01L21/318; C23C16/44
Domestic Patent References:
| JP2002069088A | 2002-03-08 |
Foreign References:
| GB2295392B | 1998-03-25 |
Other References:
ＪＯＳＥＰＨ Ａ．Ｒ．ＳＣＨＭＩＤＴ ＥＴ ＡＬ．: "Ｆｉｒｓｔ−ｒｏｗ ｔｒａｎｓｉｔｉｏｎ ｍｅｔａｌ ｃｏｍｐｌｅｘｅｓ ｏｆ ｓｔｅｒｉｃａｌｌｙ", Ｊ．ＣＨＥＭ．ＳＯＣ．, vol. ｖｏｌ．２００２，１５, JPN7010002025, 15 August 2002 (2002-08-15), US, pages ３４５４−３４６１
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Satoshi Deno
Yoshihiro Kobayashi
Takashi Ishida
Tetsuji Koga
Satoshi Deno
Yoshihiro Kobayashi