ATTENUATING PHASE SHIFT MASK BLANK AND PHOTOMASK

Title:

ATTENUATING PHASE SHIFT MASK BLANK AND PHOTOMASK

Document Type and Number:

Japanese Patent JP2005084682

Kind Code:

A

Abstract:

To provide an attenuating phase shift mask blank to be used in lithography and to provide a method for manufacturing the mask blank.

The attenuating phase shift mask comprises a substrate and a thin film system applied on one surface of the substrate. The thin film system includes a phase shift layer comprising a phase shift control upper layer and a transmission control upper layer. The phase shift mask is capable of producing a photomask having almost 180° phase shift and at least 0.001% transmission for exposure light at ≤200 nm wavelength. The thin film system is essentially free from defects having ≥0.5 μm particle size.

Inventors:

SCHMIDT FRANK
SOBEL FRANK
HESS GUENTER
BECKER HANS
GOETZBERGER OLIVER
RENNO MARKUS
CHEY S JAY
BUTTGEREIT UTE

Application Number:

JP2004255261A

Publication Date:

March 31, 2005

Filing Date:

September 02, 2004

Export Citation:

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Assignee:

SCHOTT AG
IBM

International Classes:

G03F1/08; C23C14/10; C23C14/14; C23C14/34; C23C14/46; G03F1/00; H01L21/027; (IPC1-7): G03F1/08; H01L21/027

Attorney, Agent or Firm:

Tadashi Hamamoto
Yoshiaki Sato

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