Title:
BACK SIDE GRINDING METHOD FOR SEMICONDUCTOR WAFER AND PRESSURE-SENSITIVE ADHESIVE FILM USED THEREFOR
Document Type and Number:
Japanese Patent JP3729584
Kind Code:
B
Abstract:
PROBLEM TO BE SOLVED: To prevent damage to a semiconductor wafer and prevent generation of microcrack and dimple, by using a pressure-sensitive adhesive film such that the hardness and thickness of a base film, the composition and thickness of a pressure-sensitive adhesive layer, and the pressure-sensitive adhesive force of the pressure-sensitive adhesive film are limited in specified ranges, respectively.
SOLUTION: On one surface of a base film which has a protrusion with a height A of 10-100μm and a Shore D hardness of 40 or lower and a thickness B of 150-500μm (where 4A≤B), a pressure-sensitive adhesive layer which contains an alkylacrylate-based pressure-sensitive adhesive polymer at 100 pts.wt., a crosslinking agent at 0.5-15 pts.wt. and an alkylene glycol, polymer, and has a thickness C of 30-100μm (where 0.6A≤C) is formed. The pressure- sensitive adhesive force of this pressure-sensitive adhesive film with respect to a SUS304-BA plate is specified to 80-400 g/mm. By using this pressure- sensitive adhesive film, damage to a wafer due to grinding stress on a back side is prevented, and no damage is generated at a chip level.
More Like This:
Inventors:
Hirai, Kentaro
Fujii, Yasuhisa
Kataoka, Makoto
Fukumoto, Hideki
Izukawa, Tsukuru
Fujii, Yasuhisa
Kataoka, Makoto
Fukumoto, Hideki
Izukawa, Tsukuru
Application Number:
JP1996000347432
Publication Date:
October 14, 2005
Filing Date:
December 26, 1996
Export Citation:
Assignee:
MITSUI CHEM INC
International Classes:
C09J7/02; C09J133/04; H01L21/304; C09J7/02; C09J133/04; H01L21/02; (IPC1-7): H01L21/304; C09J7/02; C09J133/04