Title:
LIQUID CRYSTAL DISPLAY AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JP3219685
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To fabricate a high quality liquid crystal display at high yield by depositing an Si oxide beneath a thin film transistor, depositing the semiconductor region of the thin film transistor thereon, and then depositing a field Si oxide for isolating an element constituting a peripheral drive part thereby preventing deterioration of the image quality.
SOLUTION: A field oxide 19 as the isolation region of a peripheral circuit part A including shift registers, signal line drive circuits and scan line drive circuits is designed thinner than the oxide 3 of polisilicon 6 deposited beneath a thin transistor region B at a screen display section. Since the peripheral circuit is small and a stopper for removing a silicon substrate from the rear surface, i.e., the oxide of polisilicon deposited beneath the thin transistor, is thick, a highly reliable liquid crystal display is realized. Furthermore, reliability of the liquid crystal display can be enhanced because a high quality oxide of polisilicon can be deposited beneath the thin film transistor.
Inventors:
Takeshi Ichikawa
Akira Okita
Akira Okita
Application Number:
JP14156896A
Publication Date:
October 15, 2001
Filing Date:
June 04, 1996
Export Citation:
Assignee:
Canon Inc
International Classes:
G02F1/1362; G02F1/1368; H01L21/336; G02F1/136; H01L29/786; (IPC1-7): H01L29/786; G02F1/1368; H01L21/336
Domestic Patent References:
| JP766424A | ||||
| JP6151855A | ||||
| JP1305575A | ||||
| JP869015A |
Attorney, Agent or Firm:
Keizo Nishiyama (1 person outside)
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