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Patent Searching and Data


Title:
BARRIER POLISHING FLUID
Document Type and Number:
Japanese Patent JP2005136388
Kind Code:
A
Abstract:

To provide a barrier-removing composition which removes a barrier at a high rate while reducing dishing of metal wiring and erosion of insulators.

This polishing fluid is useful for polishing a tantalum-containing barrier material of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound which has at least two nitrogen atoms and comprises an imine compound and a hydrazine compound. The nitrogen-containing compound is free of electron-withdrawing substituents. The polishing fluid is capable of removing the tantalum-containing barrier material from a surface of the semiconductor substrate without an abrasive grain.


Inventors:
BIAN JINRU
Application Number:
JP2004279441A
Publication Date:
May 26, 2005
Filing Date:
September 27, 2004
Export Citation:
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Assignee:
ROHM & HAAS ELECT MAT
International Classes:
B24B37/00; C09G1/02; C09K3/14; H01L21/304; H01L21/321; (IPC1-7): H01L21/304; B24B37/00; C09K3/14
Domestic Patent References:
JP2001085375A2001-03-30
JP2003068683A2003-03-07
JP2001144044A2001-05-25
JP2003507895A2003-02-25
JP2001085375A2001-03-30
JP2003068683A2003-03-07
JP2001144044A2001-05-25
JP2003507895A2003-02-25
Foreign References:
US20030131535A12003-07-17
WO2002056351A22002-07-18
US20030131535A12003-07-17
WO2002056351A22002-07-18
Attorney, Agent or Firm:
Hajime Tsukuni
Fumio Shinoda
Koshiro Tsukuda