To obtain an atmospheric pressure CVD system, which does not require cleaning the surface of a BPSG thin film formed on a semiconductor wafer with water by means of already existing cleaning equipment on the outside of the CVD system, after the thin film is formed on the surface of the wafer.

This atmospheric pressure CVD system comprises a common enclosure 8, a film-forming apparatus 3 set up in the enclosure 8, and a first transfer unit 4 which carries the semiconductor wafer S in the film forming device 3, and after the BPSG thin film is formed on the water S, carries out the water S to the carrying-out section 41A of the transfer unit 4. The CVD system also comprises a spin cleaner 100, positioned obliquely below the transfer unit 4 on the carry-out section 41A side in the enclosure 8 and a second transporter 200, which is stretched between the carry-out section 41A of the transfer unit 4 and the spin cleaner 100, so that the wafer S carrying the formed BPSG thin film is subjected to natural fall.