To provide a Bi-Te thermo-electric module of low-cost, rigid, and high reliability by jointing a Bi-Te semiconductor to an electrode with solder.
There are provided a plurality of p-type Bi-Te semiconductors and n-type Bi-Te semiconductors (3), a plurality of lower-part electrodes (2), which are connected to the lower surfaces of a pair of p-type Bi-Te semiconductor and n-type Bi-Te semiconductor via an Sn solder layer, and a plurality of upper-part electrodes (4) which are connected through the Sn solder layer to the upper surfaces of a pair of p-type Bi-Ta semiconductor and n-type Bi-Te semiconductor different from the pair, to which the lower-part electrode is connected. A plurality of p-type Bi-Te semiconductors and n-type Bi-Te semiconductors are connected in series or in parallel. Here, the composition of the Sn solder layer is represented by general expression Sn-X, (where, X is αBi, βSb, or αBi+βSb; α is 50 wt.% or below; and β is 10 wt.% or lower).
TAGUCHI KOHEI
TERAKADO KENJI
| JPH0423368A | 1992-01-27 | |||
| JP2002507321A | 2002-03-05 |
| US3079455A | 1963-02-26 |