Title:
二硼化物単結晶基板、それを用いた半導体レーザダイオード及び半導体装置並びにそれらの製造方法
Document Type and Number:
Japanese Patent JP4159828
Kind Code:
B2
Abstract:
Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.
Inventors:
Shigeki Otani
Hiroyuki Kinoshita
Hiroyuki Matsunami
Atsushi Suda
Hiroshi Amano
Isamu Akasaki
Satoshi Ueyama
Hiroyuki Kinoshita
Hiroyuki Matsunami
Atsushi Suda
Hiroshi Amano
Isamu Akasaki
Satoshi Ueyama
Application Number:
JP2002244895A
Publication Date:
October 01, 2008
Filing Date:
August 26, 2002
Export Citation:
Assignee:
National Institute for Materials Science
Kyocera Corporation
Kyocera Corporation
International Classes:
C30B29/10; C30B33/00; H01L21/20; H01L21/331; H01L29/04; H01L29/24; H01L29/737; H01L29/93; H01L31/0264; H01L31/10; H01L33/14; H01L33/32; H01S5/323; H01S5/02
Domestic Patent References:
| JP2002043223A | ||||
| JP2001253800A | ||||
| JP2003163375A |
Other References:
大谷 茂樹,窒化ガリウムと格子整合する二ホウ化ジルコニウム基板,工業材料,2002年 6月 1日,Vol.50, No.6,pp.97-100
Attorney, Agent or Firm:
Kazuyuki Hirayama
Kaizu Hozo
Kaizu Hozo