Title:
BIPOLAR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING IT
Document Type and Number:
Japanese Patent JP2586309
Kind Code:
B2
Abstract:
PURPOSE: To lead out even a fine emitter with low resistance by decreasing a step at the opening part of the emitter.
CONSTITUTION: On an n-type silicon substrate 1, under the surface of which an insulating region 2 is buried and the surface of which is processed to be flat, a collector region 3 and an n-type polycrystalline silicon region layer 4 are foremed, and on which an oxide film 5 and a nitrate film 6 are formed (a). On a collector 3, a resist 7 is provided and ion-implanting B, a p-type polycrystalline silicon layer 8 that functions as base is formed (b). After some ashing of the surface of the resist 7, the nitrate film removed selectively (c), and an oxide film 9 is formed by thermal oxidation, a p-type monocrystalline region 10 is formed and then a base region 11 is formed by ion-implantation (d). The oxide film 5 is removed and an emitter region 13 is formed by the diffusion of impurity from an n-type polycrystalline silicon layer 12(e).
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Inventors:
SAWAIRI AKIHIRO
Application Number:
JP28053493A
Publication Date:
February 26, 1997
Filing Date:
October 14, 1993
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/73; H01L21/331; H01L29/732; (IPC1-7): H01L21/331; H01L29/73
Domestic Patent References:
| JP2180022A | ||||
| JP2207534A |
Attorney, Agent or Firm:
Yusuke Omi