Title:
BIPOLAR TRANSISTOR
Document Type and Number:
Japanese Patent JP2003133327
Kind Code:
A
Abstract:
To reduce manufacturing cost by reducing element area in given operating frequency and output electric power, while satisfying the requirements for the element having high output and high operating frequency.
To increase values (edge length/area) of the planar structure of an emitter and improve the current drive capacity of the emitter, an emitter planar structure 2-1 is formed of a bar-like polygonal main axis (trunk) 2-3 and a plurality of polygonal branches 2-4 connecting with the main axis 2-3. For example, when the planar structure is formed of a square main axis and a plurality of square branches, A, B and D all become 2 μm respectively, and when C is 4 μm, W is 10 μm and L becomes 22 μm.
Inventors:
RYUM BYUNG RYUL
Application Number:
JP2002303745A
Publication Date:
May 09, 2003
Filing Date:
October 18, 2002
Export Citation:
Assignee:
ASB INC
International Classes:
H01L21/331; H01L21/328; H01L29/06; H01L29/08; H01L29/73; H01L29/732; (IPC1-7): H01L21/331; H01L29/73
Attorney, Agent or Firm:
Sanshin Iwao (2 people outside)