Title:
BIPOLAR TRANSISTOR
Document Type and Number:
Japanese Patent JPH0231426
Kind Code:
A
Abstract:
PURPOSE: To provide an additional function for a bipolar transistor, by providing a conductive polycrystalline Si layer above the main body which is insulated from a main surface of the main body and extend to above a main surface region located between both junctions. CONSTITUTION: On a main surface of the main body 16, an insulation material layer e.g. Si dioxide layer 38 is formed, a conductive polysilicon layer 40 is formed thereon, and has a pair of thin and long strips 42 extending along a region of the main surface 18 between a collector-base junction 28 and an emitter-base junction of an emitter region 30. The strips 42 function as a field shield for the emitter-base region and each of them extends to a substantially rectangular region 44 of polysilicon located at one end of the emitter region 30. The region 44 functions as an emitter stabilizing resistance.
Inventors:
OTSUTOO HEINRITSUCHI SHIEEDO J
Application Number:
JP12461989A
Publication Date:
February 01, 1990
Filing Date:
May 19, 1989
Export Citation:
Assignee:
GEN ELECTRIC
International Classes:
H01L21/331; H01L21/8222; H01L21/8249; H01L27/06; H01L29/06; H01L29/08; H01L29/40; H01L29/73; H01L29/732; (IPC1-7): H01L21/331; H01L27/06; H01L29/06; H01L29/73
Attorney, Agent or Firm:
Tadao Hirata (2 outside)
Next Patent: JPH0231427