Title:
BISMUTH SOURCE SOLUTION FOR CHEMICAL VAPOR DEPOSITION AND METHOD FOR FORMING BISMUTH-CONTAINING THIN FILM USING THE SAME
Document Type and Number:
Japanese Patent JP2004256510
Kind Code:
A
Abstract:
To provide a source solution for bismuth compound that can reduce the use of the solvent in the formation of bismuth-containing thin film through the chemical vaporization deposition (CVD) process and can give the thin film of good flatness over a wide range of the substrate temperature.
As a solute for the source solution, is selected tri(p-tolyl) bismuth represented by the structural formula.
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| WO/1996/019487 | ORGANOBISMUTH DERIVATIVES AND PROCESS FOR PRODUCING THE SAME |
| JP4228692 | Bismuth compound |
Inventors:
FURUYAMA KOICHI
TAZAKI YUZO
YODA KOJI
TAZAKI YUZO
YODA KOJI
Application Number:
JP2003099749A
Publication Date:
September 16, 2004
Filing Date:
February 26, 2003
Export Citation:
Assignee:
TOYOSHIMA SEISAKUSHO KK
International Classes:
C07F9/94; C23C16/18; C23C16/40; H01L21/316; (IPC1-7): C07F9/94; C23C16/18; H01L21/316