To provide a halftone type phase shift mask which satisfies the optical constant as a phase shift mask with exposure light (not only KrF excimer laser but ArF excimer laser as well) and is capable of controlling the reflectivity at the exposure light and the transmittance at an inspection wavelength and a blank for the phase shift mask.
The translucent regions 27 of the halftone type phase shift mask having transparent regions 28 and translucent regions 27 to the exposure light on a translucent substrate 21 and the blank for the mask consist of single layer or ≥2 layers of multilayered films and at least one layer thereof are formed of zirconium silicide compd. thin films. Further, the zirconium silicide compd. thin films consist of the single layer film or multilayered films of the zirconium silicide compd. thin films. The zirconium silicide compd. thin films are formed of compd. thin films selected from a group consisting of zirconium, silicon, oxygen, nitrogen and halogen elements.
OKUBO KINJI
MATSUO TADASHI
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