Title:
BLANK PHOTOMASK AND METHOD FOR MANUFACTURING PHOTOMASK USING THE SAME
Document Type and Number:
Japanese Patent JP2005062884
Kind Code:
A
Abstract:
To provide a blank photomask and a method for manufacturing a photomask using the same.
The blank photomask comprises: a chromium light shielding layer formed on a light-transmissive substrate; a hard mask layer comprising a conductive substance formed thereon with an etching selectivity of at least 3:1 or higher with respect to the chromium light shielding layer against an etching gas mixture containing chlorine gas and oxygen gas; and a resist layer formed on the hard mask layer. Further, a phase inversion layer can be interposed between the light-transmissive substrate and the chromium light shielding layer. As for the hard mask layer, Mo or MoSi is preferably used.
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Inventors:
LEE JEONG-YUN
YIM KA-SOON
HWANG JAE-HEE
JANG IL-YONG
YIM KA-SOON
HWANG JAE-HEE
JANG IL-YONG
Application Number:
JP2004235965A
Publication Date:
March 10, 2005
Filing Date:
August 13, 2004
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
B32B9/00; B32B15/00; B32B17/06; G03F1/32; G03F1/58; G03F7/20; G03F9/00; H01L21/027; H01L21/3065; (IPC1-7): G03F1/08; G03F7/20; H01L21/027; H01L21/3065
Domestic Patent References:
JPH06138650A | 1994-05-20 | |||
JPH04371955A | 1992-12-24 | |||
JPS5741638A | 1982-03-08 | |||
JPH0553290A | 1993-03-05 | |||
JP2001033940A | 2001-02-09 | |||
JPS63173051A | 1988-07-16 | |||
JPH0749558A | 1995-02-21 | |||
JPS61138256A | 1986-06-25 | |||
JPH1165095A | 1999-03-05 | |||
JPH11271958A | 1999-10-08 |
Attorney, Agent or Firm:
Mikio Hatta
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii
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