To prevent distortion and stress from generating on a silicon thin film by forming the silicon thin film of a ceramic compound material of silicon, a ceramic whose average expansion coefficient is higher than that of silicon and a ceramic whose average thermal expansion coefficient is lower than that of silicon, and has a specific average thermal coefficient.
Specific quantities of a silicon powder having an average grain diameter of 40 μm or smaller, an AlN powder having an average grain diameter of 1 μm or smaller and a silica glass powder having an average grain diameter of 2 μm are weighed, the powders are mixed with hexane as solvent, the hexane is vaporized in a glove box filled with nitrogen gas, the material is dried and a sintered body is formed. The AlN powder has a higher average thermal expansion coefficient than that of silicon, the silica glass has a lower average thermal expansion coefficient than that of silicon, and the ceramic compound material having an average thermal coefficient of 90-110% of that of silicon is formed. A thin film solar cell 10 is composed of a p-n junction composed of a board 1, and a silicon thin film 11 provided on the surface of the board 1, and distortion and stress are prevented from generating on the silicon thin film 11.
ITO TADASHI
YAMAGUCHI MASASHI
