Title:
BONDING METHOD AND POWER SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015123485
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a bonding method and a power semiconductor device capable of obtaining bonding which responds to high temperature and is excellent in heat conductivity.SOLUTION: A method of performing bonding by producing a metallic compound (CuSn) between bonding objects M1, M2 opposite to each other includes a process of forming a mixed layer of a first metal (Cu) and a second metal (Sn), a process of overlapping the bonding objects M1, M2 so as to put the mixing layer between the bonding objects and a process of heating the mixed layer to a temperature in the middle of a melting point of the first metal and a melting point of the second metal to produce the metallic compound (CuSn) between the bonding objects M1, M2. Therein, in the process of forming the mixed layer, the mixed layer is formed by deposition on the bonding surface of at least one side bonding object (M1).
Inventors:
OTA NARUTO
SODA SHINNOSUKE
YOKOYAMA YOSHINORI
SODA SHINNOSUKE
YOKOYAMA YOSHINORI
Application Number:
JP2013271028A
Publication Date:
July 06, 2015
Filing Date:
December 27, 2013
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
B23K20/00; H01L21/52; H01L25/07; H01L25/18
Domestic Patent References:
| JP2007019360A | 2007-01-25 | |||
| JP2009060101A | 2009-03-19 | |||
| JP2013013933A | 2013-01-24 | |||
| JP2002314241A | 2002-10-25 |
Foreign References:
| US20120112201A1 | 2012-05-10 |
Attorney, Agent or Firm:
Masuo Oiwa
Takenaka Ikuo
Keigo Murakami
Kenji Yoshizawa
Takenaka Ikuo
Keigo Murakami
Kenji Yoshizawa