PURPOSE: To shorten the time, and to improve accuracy by die-bonding a semiconductor laser chip by spot beams.

CONSTITUTION: AuSn 2 is evaporated to the upper section of a trapezoid 1 formed by etching Si to a mesa shape, and a semiconductor laser chip 3 is positioned at an end surface. Only the periphery of the semi-conductor laser chip 3 is heated by infrared spot beams 4, AuSn is melted, and Si is die-bonded with the laser chip. An Si sub-mount material is moved in the direction of the arrow, and the laser chips 4 are die-bonded similarly in succession. Accordingly, the bonding time can be shortened while a jig does not e-xpand by thermal expansion because the whole jig need not be heated, thus improving accuracy.