PURPOSE: To surely and stably produce a bonded SiC keeping high stability and strength at high temperature by contacting a plurality of sintered SiC materials interposing low-temperature-type SiC particles and high-temperature- type SiC particles between the materials and heating the assembly at a specific temperature to bond the materials.

CONSTITUTION: Two or more sintered SiC materials are made to contact with each other in such a manner as to form a contact part at the contacting interface between low-temperature-type SiC particles composed of at least one kind of SiC selected from 3C and 2H polytypes and high-temperature-type SiC particles composed of at least one kind of SiC selected from 6H, 4H and 15R polytypes. The ratio of the contacting area of the low-temperature-type SiC particles and the high-temperature-type SiC particles is preferably ≥50% of the total contacting interface. The obtained contacting product of sintered SiC is heated at 1700-2100°C. The high-temperature-type SiC particle grows by taking the contacting low-temperature-type SiC particle to cause the substance transfer and the bonding of the sintered materials with the densified particles. A bonded SiC keeping high stability and strength at high temperature can be produced by this process without using high pressure.