Title:
BORAZINE FILM HAVING LOW ETCHING RATE
Document Type and Number:
Japanese Patent JP2016004865
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a borazine film which is high in adhesiveness to upper and lower films and also high in hardness since a borazine compound is high in compactness, and is capable of highly accurately forming fine patterns since an etching rate under a predetermined etching condition is low, thereby achieving higher integration and miniaturization of a semiconductor device.SOLUTION: In a borazine film obtained by deposition using a compound having a borazine skeleton as a raw material, the etching rate in a reactive ion etching that is performed in the following etching condition is 0 nm/min or higher and 30 nm/min or lower. Etching condition gas: CF/H(gas flow ratio 20 sccm/7 sccm); pressure: 4 Pa; RF power (frequency 13.56 MHz): 180 W; and bias voltage: 410 V.
Inventors:
TAKAHASHI MITSURU
KAMIYAMA TAKUYA
KAMIYAMA TAKUYA
Application Number:
JP2014123492A
Publication Date:
January 12, 2016
Filing Date:
June 16, 2014
Export Citation:
Assignee:
NIPPON CATALYTIC CHEM IND
International Classes:
H01L21/3065; C23C16/38; G03F7/26; H01L21/027
Attorney, Agent or Firm:
Hideno Kono
Nobuo Kono
Nobuo Kono
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