Title:
BORON PHOSPHIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND ITS MANUFACTURING METHOD AND LAMP
Document Type and Number:
Japanese Patent JP3951719
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a boron phosphide semiconductor element equipped with a reflecting mirror in simple structure which can efficiently reflect emitted light to an external visual field.
SOLUTION: A 1st barrier layer which is arranged between an Si single- crystal substrate and a light emission layer made of a group III nitride semiconductor containing nitride is formed of a single boron phosphide group III-V compound semiconductor layer which has the same conductivity type with the Si single-crystal substrate and has its layer thickness so adjusted as to have a ≥30% reflection factor to the light emitted by the light emission layer.
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Inventors:
Takashi Udagawa
Application Number:
JP2002018188A
Publication Date:
August 01, 2007
Filing Date:
January 28, 2002
Export Citation:
Assignee:
SHOWA DENKO K.K.
International Classes:
C30B25/02; C30B29/40; H01L21/20; H01L21/205; H01L29/04; H01L29/201; H01L33/30; (IPC1-7): H01L33/00; H01L21/205
Domestic Patent References:
| JP2288371A | ||||
| JP2000235956A | ||||
| JP11266006A | ||||
| JP9139546A |
Attorney, Agent or Firm:
Shinji Kakinuma