PURPOSE: To provide a semiconductor switch circuit which has a larger insertion loss ratio between the ON and OFF modes even in a high frequency band.
CONSTITUTION: A bridge circuit 6 consists of four FET 3a, 3b, 3c and 3d which are connected together in a bridge form at four points. Then two connection points set opposite to each other are used as the input terminals 1a and 1b, and other two connection points set opposite to each other are used as the output terminals 2a and 2b respectively. The prescribed control voltage is applied to the gates of FET 3a, 3b, 3c and 3d, and the circuit 6 is set in an unbalanced or balanced state. Thus a switch circuit is turned on and off. Furthermore, the FET 3a and 3d set opposite to each other can be replaced with the resistance elements corresponding to the ON resistors of FETs among those four FETs.
MINAGAWA AKIRA
IMAI NOBUAKI
