BRITTLE MATERIAL SPLITTING METHOD BY BAND SHAPED HEAT SOURCE

Title:

BRITTLE MATERIAL SPLITTING METHOD BY BAND SHAPED HEAT SOURCE

Document Type and Number:

Japanese Patent JPH1034363

Kind Code:

A

Abstract:

To improve working precision and moreover to reduce thermal effect to devices such as a LSI in the case of working a semiconductor wafer or the like.

In this working method, a crack formed in the working start point of a material is guided along a predetermined splitting line with thermal stress by irradiation generating with the application of the heat source of a laser beam or the like. In this case, the material is irradiated with such a band shaped heat source B that the diameter in the direction along the predetermined splitting line L becomes long while the diameter in the rectangular direction becomes short. Whereby, the temperature distribution having a steep grade in the vicinity of the crack end is formed without rising the power density of the heat source.

Inventors:

KAJIWARA KUNIO
OKIYAMA TOSHIHIRO
SHIRAHAMA HIDEYUKI
OONITA EISHIN
SUENAGA TOMOHIRO
KINOSHITA KOICHI
MAEKAWA SHUNICHI
MORITA HIDEKI

Application Number:

JP19623196A

Publication Date:

February 10, 1998

Filing Date:

July 25, 1996

Export Citation:

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Assignee:

SOUEI TSUSHO KK
NAGASAKI PREFECTURE
JAPAN RES DEV CORP

International Classes:

B23K26/40; B23K26/00; B23K26/06; B23K26/073; B23K26/38; H01L21/301; (IPC1-7): B23K26/00; B23K26/00; B23K26/06; H01L21/301

Attorney, Agent or Firm:

Yoshiro Kurauchi

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