Title:
BUMP ELECTRODE FORMING METHOD IN SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5287978
Kind Code:
A
Abstract:
PURPOSE:To produce a bump electorde of high reliability by laminating a metal film and underlying metal film of small deposition stress on an insulator film except the bump electrode and its surrounding.
Inventors:
MIYAMOTO KEIJI
KATOU HIROSHI
KAWANOBE TOORU
INABA YOSHIHARU
KATOU HIROSHI
KAWANOBE TOORU
INABA YOSHIHARU
Application Number:
JP411276A
Publication Date:
July 22, 1977
Filing Date:
January 19, 1976
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/60; H01L21/28; (IPC1-7): H01L21/28
Previous Patent: JPS5287977
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