To provide a controller and a control method for readdressing by controlling burst access to a synchronous dynamic semiconductor memory device having at least two memory banks.

The invention relates to a device for controlling the burst access to the synchronous dynamic semiconductor memory device having at least two memory banks. It is provided with an address converter unit 12 converting a logical access address into a plurality of physical access addresses by splitting the burst access into at least two partial burst accesses. The first physical access address addresses a first memory area of the first memory bank for the first partial burst access, and the second physical access address addresses a second memory area of the second memory bank for the second partial burst access.