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Title:
CASTING METHOD OF HYPER-EUTECTIC Al-Si BASED ALLOY, AND INGOT THEREOF
Document Type and Number:
Japanese Patent JP2010012470
Kind Code:
A
Abstract:

To provide a casting method of a hyper-eutectic Al-Si based alloy wherein a primary crystal Si is made fine and the primary crystal Si is uniformly distributed, and an ingot of the hyper-eutectic Al-Si based alloy in which the primary crystal Si is made fine and uniformly distributed.

The molten hyper-eutectic Al-Si based alloy containing the primary crystal Si fining agent is supplied from a heat insulating molten metal storage part 3 of a hot top part 2 to a quenching mold 4 so as to be cooled and solidified to manufacture an ingot B of the hyper-eutectic Al-Si based alloy. A molten metal discharging port 6 of the heat insulating molten metal storage part 3 is continuous to a molten metal introducing port 7 of the quenching mold 4, and the diameter of the molten metal introducing port 7 is larger than that of the molten metal discharging port 6. Thus, a lower end face of the hot top part 2 in contact with the quenching mold 4 is exposed in the molten metal introducing port 7, and an eaves part 8 is formed by the exposed lower end face. The width d of the eaves part 8 is 1-10 mm. The solidification time from the liquidus temperature in the molten metal 1 to be cooled in the quenching mold 4 to the eutectic temperature is 3 s.


Inventors:
SUGITA KAORU
SAGISAKA EIKICHI
Application Number:
JP2008171838A
Publication Date:
January 21, 2010
Filing Date:
June 30, 2008
Export Citation:
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Assignee:
NIPPON LIGHT METAL CO
International Classes:
B22D11/041; B22D11/00; B22D27/20; C22B21/06; C22C21/02
Domestic Patent References:
JP2008018467A2008-01-31
JPH06158210A1994-06-07
JPH06279904A1994-10-04
JP2008018467A2008-01-31
JPH06158210A1994-06-07
JPH06279904A1994-10-04
Foreign References:
WO2008016169A12008-02-07
WO2008016169A12008-02-07
Attorney, Agent or Firm:
Tetsuya Mori
Yoshiaki Naito
Cui Shu Tetsu



 
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