To provide a casting method of a hyper-eutectic Al-Si based alloy wherein a primary crystal Si is made fine and the primary crystal Si is uniformly distributed, and an ingot of the hyper-eutectic Al-Si based alloy in which the primary crystal Si is made fine and uniformly distributed.
The molten hyper-eutectic Al-Si based alloy containing the primary crystal Si fining agent is supplied from a heat insulating molten metal storage part 3 of a hot top part 2 to a quenching mold 4 so as to be cooled and solidified to manufacture an ingot B of the hyper-eutectic Al-Si based alloy. A molten metal discharging port 6 of the heat insulating molten metal storage part 3 is continuous to a molten metal introducing port 7 of the quenching mold 4, and the diameter of the molten metal introducing port 7 is larger than that of the molten metal discharging port 6. Thus, a lower end face of the hot top part 2 in contact with the quenching mold 4 is exposed in the molten metal introducing port 7, and an eaves part 8 is formed by the exposed lower end face. The width d of the eaves part 8 is 1-10 mm. The solidification time from the liquidus temperature in the molten metal 1 to be cooled in the quenching mold 4 to the eutectic temperature is 3 s.
SAGISAKA EIKICHI
JP2008018467A | 2008-01-31 | |||
JPH06158210A | 1994-06-07 | |||
JPH06279904A | 1994-10-04 | |||
JP2008018467A | 2008-01-31 | |||
JPH06158210A | 1994-06-07 | |||
JPH06279904A | 1994-10-04 |
WO2008016169A1 | 2008-02-07 | |||
WO2008016169A1 | 2008-02-07 |
Yoshiaki Naito
Cui Shu Tetsu