Title:
CMOSイメージセンサーのアクティブピクセル回路
Document Type and Number:
Japanese Patent JP4558216
Kind Code:
B2
Abstract:
An active pixel circuit in a CMOS image sensor includes a photodiode to accumulate charge due to incident light. A first transfer transistor is arranged to pass a transfer signal when turned on by a column selection signal. A second transfer transistor transfers the accumulated charge from the photodiode to a first floating node when turned on by the transfer signal from the first transfer transistor. A source follow driver transistor changes the potential of a second floating node according to the charge transferred to the first floating node. A line selecting transistor reads out the potential of the second floating node when turned on by a line selection signal, and a reset transistor resets the charges accumulated in the first floating node when the reading out operation is finished.
Inventors:
Lee Rui Kei
Kim Hisashi Kei
Atsushi Jun
Kim Hisashi Kei
Atsushi Jun
Application Number:
JP2001004493A
Publication Date:
October 06, 2010
Filing Date:
January 12, 2001
Export Citation:
Assignee:
Crostec Capital, Limited Liability Company
International Classes:
H01L27/146; H01L27/14; H04N1/028; H04N5/335; H04N5/369; H04N5/374; H04N5/3745
Domestic Patent References:
| JP2001085658A | ||||
| JP2171088A | ||||
| JP11122532A | ||||
| JP11239299A | ||||
| JP10248034A |
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Naomi Yoshida
Ayako Nakamura
Fukagawa Eri
Satoshi Morimoto
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Naomi Yoshida
Ayako Nakamura
Fukagawa Eri
Satoshi Morimoto