Title:
金属配線用CMPスラリー組成物
Document Type and Number:
Japanese Patent JP3987490
Kind Code:
B2
Abstract:
Disclosed herein are slurry compositions for use in CMP(chemical mechanical polishing) process of metal wiring in manufacturing semiconductor devices, comprising a peroxide, an inorganic acid, a propylenediaminetetraacetate(PDTA)-metal complex, a carboxylic acid, a metal oxide powder, and de-ionized water, wherein the PDTA-metal complex plays a major role in improving overall polishing performance and reproducibility thereof by preventing abraded tungsten oxide from readhesion onto the polished surface, as well as in improving the dispersion stability of the slurry composition.
More Like This:
Inventors:
Li Jessou
De Won Jun
Rho Hyun Soo
Li Kirsan
Lee Jung Won
Yoon Boon
Her Sanroku
Park Junsang
Hong Chunky
De Won Jun
Rho Hyun Soo
Li Kirsan
Lee Jung Won
Yoon Boon
Her Sanroku
Park Junsang
Hong Chunky
Application Number:
JP2003519982A
Publication Date:
October 10, 2007
Filing Date:
August 06, 2002
Export Citation:
Assignee:
Daiichi Wool Co., Ltd.
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14; H01L21/321
Domestic Patent References:
| JP2001196336A | ||||
| JP2000160139A | ||||
| JP2003514950A |
Attorney, Agent or Firm:
Yamato Tsutsui