Title:
シリコン融液面の高さ位置の算出方法およびシリコン単結晶の引上げ方法ならびにシリコン単結晶引上げ装置
Document Type and Number:
Japanese Patent JP5664573
Kind Code:
B2
Abstract:
A method for calculating a height position of a silicon melt surface at the time of pulling a CZ silicon single crystal is disclosed, including: obtaining a first crystal diameter measured from a fusion ring on a boundary of the silicon melt and the silicon single crystal by using a CCD camera installed at an arbitrary angle relative to the silicon single crystal, and a second crystal diameter measured by using two CCD cameras installed parallel to both ends of a crystal diameter of the silicon single crystal; and calculating the height position of the silicon melt surface in the crucible during pulling of the silicon single crystal from a difference between the first crystal diameter and the second crystal diameter. As a result, a method for enabling further accurately calculating a height position of a silicon melt surface at the time of pulling a silicon single crystal is provided.
Inventors:
増田 直樹
柳町 隆弘
柳町 隆弘
Application Number:
JP2012034694A
Publication Date:
February 04, 2015
Filing Date:
February 21, 2012
Export Citation:
Assignee:
信越半導体株式会社
International Classes:
C30B29/06; C30B15/26
Attorney, Agent or Firm:
Good Miya Mikio