Title:
CAPACITANCE FORMING CIRCUIT AND MICROWAVE OSCILLATOR
Document Type and Number:
Japanese Patent JPS6035805
Kind Code:
A
Abstract:
A temperature stabilizing circuit for a microwave oscillator employing a field effect transistor on an AsGa substrate, in which a temperature-stabilized frequency is obtained by varying the gate-channel capacitance of an FET included in the oscillator resonance circuit. The capacitance is controlled by a voltage derived from a voltage divider comprising a series arrangement of several Schottky diodes or FET's. The circuit is suited to assembly as an integrated monolithic circuit comprising FETs on a AsGa substrate, for micro wave frequency applications such as for example, processing 12 GHz satellite television signals.
Inventors:
KURISUTO TSUIRONI
Application Number:
JP10976584A
Publication Date:
February 23, 1985
Filing Date:
May 31, 1984
Export Citation:
Assignee:
PHILIPS NV
International Classes:
H03B5/04; H03L1/02; (IPC1-7): H03B5/04; H03B5/18
Domestic Patent References:
| JPS4854850A | 1973-08-01 | |||
| JP53116274B |
Attorney, Agent or Firm:
Akihide Sugimura