To provide a capacitance type humidity sensor having superior reliability and being capable of being constituted of a material which can be manufactured by a normal semiconductor manufacturing line.
The capacitance type humidity sensor is equipped with a semiconductor substrate 10, the silicon oxide film formed on the semiconductor substrate 10, two electrodes 31 and 32 formed on the silicon oxide film 20 so as to face each other in the same plane spaced apart, a silicon nitride film 40 formed so as to cover two electrodes 31 and 32 and the humidity-sensitive film 50 formed on the silicon nitride film 40, so as to cover both electrodes 31 and 32 and the space between both electrodes 31 and 32 and changed in its capacitance value corresponding to humidity. The capacitance value between two electrodes 31 and 32 changes, corresponding to a change in humidity of the surrounding.
MATSUHASHI HAJIME
ASAUMI KAZUSHI
NIPPON SOKEN