Title:
CAPACITIVE ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP3819003
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent bismuth from coming out of a capacitive film constituted of a bismuth layer-shaped structure ferroelectric film at the time of forming the capacitive film.
SOLUTION: This capacitive element is provided with a diffusion preventing layer 10a, a capacitive lower electrode 12 formed on the diffusion preventing layer 10a, a capacitive film 13 constituted of a ferroelectric having a bismuth layer-shaped structure formed on the capacitive lower electrode 12, and a capacitive upper electrode 14 formed on the capacitive film 13. The diffusion preventing layer 10a is constituted of materials where bismuth oxide is added to conductive metallic oxide.
Inventors:
Toru Nasu
Shinichiro Hayashi
Shinichiro Hayashi
Application Number:
JP2004008904A
Publication Date:
September 06, 2006
Filing Date:
January 16, 2004
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L27/04; H01L27/105; H01L21/822; H01L21/8242; H01L21/8246; H01L27/108; (IPC1-7): H01L27/105; H01L21/822; H01L21/8242; H01L27/04; H01L27/108
Domestic Patent References:
| JP10242408A | ||||
| JP9082906A |
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Yuji Takeuchi
Katsumi Imae
Tomoo Harada
Hiroshi Koyama
Hiroshi Takeuchi
Yuji Takeuchi
Katsumi Imae
Tomoo Harada