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Patent Searching and Data


Title:
CAPACITIVE PRESSURE SENSOR
Document Type and Number:
Japanese Patent JPH08240502
Kind Code:
A
Abstract:

PURPOSE: To provide a capacitive pressure sensor designed to improve the linearity of output characteristics while the pressure sensitivity is set high in a required state.

CONSTITUTION: A silicon substrate 10 with a diaphragm 13 and a flat glass substrate 11 are united by anodic bonding. A pressure introduction path 17 is formed to penetrate the glass substrate up and down, making it possible to supply a measuring pressure P to a pressure chamber 14. A pressure leak groove 18 is formed at a predetermined position of a bonding face of the silicon substrate at the side bonded to the glass substrate. Accordingly, a part of the measuring pressure is let to leak outside through the pressure leak groove. The leaking amount is determined by a correlation of a cross sectional area S2 of the leak groove and an area S1 of the pressure introduction path. A ratio of the leaking amount to the supplying amount of gas decreases in accordance with an increase of the pressure. Since the ratio of the leaking amount is non-linear, the non-linearity of the deflecting amount of the diaphragm to the pressure is offset, thus widening an area of the linearity.


Inventors:
FURUMURA YOSHIYUKI
SAKATA YOSHITAKA
Application Number:
JP6892095A
Publication Date:
September 17, 1996
Filing Date:
March 03, 1995
Export Citation:
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Assignee:
OMRON TATEISI ELECTRONICS CO
International Classes:
G01L1/14; G01L9/12; G01L13/06; H01L29/84; (IPC1-7): G01L13/06; G01L1/14; H01L29/84
Attorney, Agent or Firm:
Shinichi Matsui