To increase reliability in a capacitor as much as possible by a method wherein a first conductive diffusion layer formed in a semiconductor region at both sides of a gate electrode is connected to a first wiring via a contact formed thereon.

A p-type diffusion layer 10a is formed in a (p) well 6 at both sides of a gate electrode 9, and is structured so that a p-type impurity concentration is higher than the (p) well 6. Furthermore, a p-type diffusion layer 10b is formed at both sides of the gate electrode 9 forming a side wall 12, and is structured so that a p-type impurity concentration is higher than a p-type diffusion layer 10a. Furthermore, a silicide layer 18 is formed on the gate electrode 9, and is structured so that a silicide layer 16 is formed on the p-type diffusion layer 10b. Here, the first conductive diffusion layers 10a, 10b formed in the semiconductor region at both the sides of the gate electrode 9 are connected to a first wiring via a contact formed on these diffusion layers.