Title:
CAPACITOR AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2005159271
Kind Code:
A
Abstract:
To provide a capacitor which is equipped with a dielectric film having a hafnium oxide and an aluminum oxide, can obtain a characteristic of a high dielectric breakdown voltage in a high voltage applied area, and can prevent a leakage current from increasing caused by the following heat treatment process after forming an upper electrode, and to provide its manufacturing method.
The capacitor is laminated with a lower electrode 21, a mixed dielectric film 22, and an upper electrode 23 in that order, and is equipped with the mixed dielectric film where the hafnium oxide 22B and the aluminum oxide 22A are mixed, in a portion where the mixed dielectric film 22 is adjacent to the upper electrode 23 or the lower electrode 21.
Inventors:
KIL DEOK-SIN
RO SAISEI
SOHN HYUN-CHUL
RO SAISEI
SOHN HYUN-CHUL
Application Number:
JP2004129856A
Publication Date:
June 16, 2005
Filing Date:
April 26, 2004
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC
International Classes:
C23C16/40; H01L21/02; H01L21/28; H01L21/314; H01L21/316; H01L21/822; H01L21/8242; H01L27/04; H01L27/08; H01L27/105; H01L27/108; H01L29/76; H01L31/062; (IPC1-7): H01L21/8242; H01L21/316; H01L21/822; H01L27/04; H01L27/108
Domestic Patent References:
| JP2004529489A | 2004-09-24 | |||
| JP2003308735A | 2003-10-31 | |||
| JP2002343790A | 2002-11-29 | |||
| JP2002314072A | 2002-10-25 | |||
| JP2003303514A | 2003-10-24 | |||
| JP2004274067A | 2004-09-30 | |||
| JP2004161602A | 2004-06-10 | |||
| JP2002367982A | 2002-12-20 |
Foreign References:
| WO2002065525A1 | 2002-08-22 |
Attorney, Agent or Firm:
Eiji Saegusa
Yasumitsu Tate
Shinichi Mashita
Kimio Matsumoto
Tachibana Kenji
Ryuji Inuchi
Yasumitsu Tate
Shinichi Mashita
Kimio Matsumoto
Tachibana Kenji
Ryuji Inuchi