PURPOSE: To almost avoid the decrease in the inverted charge resultant from the residual polarization or the inversion of residual polarization by a method wherein aluminum oxide layer and metallic oxide layer are formed on the interfaces respectively between a lower electrode and a ferroelectric thin film and between an upper electrode and the ferroelectric thin film.

CONSTITUTION: Within the title capacitor for non-volatile memory using a ferroelectric thin film 1, a lower electrode 2 is formed on a semiconductor substrate 4 with an insulating oxide film 5 formed thereon by surface oxidizing process. Next, the ferroelectric thin film 1 is formed on the lower electrode 2 further to form an upper electrode 3 on the thin film 1. The lower electrode 2 especially comprises an alloy containing aluminum while an aluminum oxide layer 2a is formed on the interface between the lower electrode 2 and the thin film 1. Furthermore, a metallic oxide layer 3a is formed on the interface between the upper electrode 3 and the thin film 1. Through these procedures, the aluminum oxide layer 2a and the metallic oxide layer 3a can avoid the interdiffusion of the element and ions between the ferroelectric thin film 1 and the metallic electrode 3 and 2 due to the inverted polarization.