CAPACITOR STRUCTURE, FILM FORMING METHOD AND APPARATUS

Japanese Patent JP2004079687

A

To provide a capacitor structure which can control change in capacitance for variation of leak current and applied voltage without excessive increase in the film thickness.

The capacitor structure comprises a lower electrode film 4 consisting of a metal film or a metal compound film, an upper electrode film 8 consisting of a metal film or a metal compound film, and a siliconless high dielectric material film 6 provided between the lower electrode and upper electrode and does not include silicon atom. In addition to the siliconless high dielectric material film, at least one layer of a silicon-doped high dielectric material film 60 including the silicon atom is also provided. Accordingly, change in the capacitance for variation of leak current and applied voltage can be controlled.

MOROZUMI YUUICHIRO
HASEBE KAZUHIDE
NAKAJIMA SHIGERU
FURUYA HARUHIKO
SAI TOKIN
UMEHARA TAKAHITO
HARADA TOSHISHIGE
FUJIWARA TOMONORI
FUJITA HIROTAKE

JP2002236098A

March 11, 2004

August 13, 2002

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TOKYO ELECTRON LTD

C23C16/42; H01L21/02; H01L21/31; H01L21/316; H01L21/822; H01L27/04; (IPC1-7): H01L21/822; C23C16/42; H01L21/31; H01L21/316; H01L27/04

Akihiro Asai

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